Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond
Seong-Dong Kim,
M. Guillorn,
I. Lauer,
P. Oldiges,
T. Hook,
M. Na
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6 |
2015 |
6
2015
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Quentin: an Ultra-Low-Power PULPissimo SoC in 22nm FDX
Pasquale Davide Schiavone,
D. Rossi,
A. Pullini,
Alfio Di Mauro,
Francesco Conti,
L. Benini
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5 |
2018 |
5
2018
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Monolithic 3D IC vs. TSV-based 3D IC in 14nm FinFET technology
S. Samal,
D. Nayak,
M. Ichihashi,
S. Banna,
S. Lim
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5 |
2016 |
5
2016
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Design challenges and solutions for ultra-high-density monolithic 3D ICs
Shreepad Panth,
S. Samal,
Y. Yu,
S. Lim
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5 |
2014 |
5
2014
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Monolithic 3D integration: A powerful alternative to classical 2D scaling
23 auth.
M. Vinet,
P. Batude,
C. Fenouillet-Béranger,
F. Clermidy,
L. Brunet,
O. Rozeau,
Jm Hartmannn,
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G. Cibrario,
B. Previtali,
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C. Tabone,
B. Sklénard,
O. Turkyilmaz,
F. Ponthenier,
N. Rambal,
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F. Deprat,
V. Lu,
L. Pasini,
S. Thuries,
H. Sarhan,
J.-E Michallet,
O. Faynot
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5 |
2014 |
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2014
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Can we connect trillions of IoT sensors in a sustainable way? A technology/circuit perspective (Invited)
D. Bol,
G. de Streel,
D. Flandre
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5 |
2015 |
5
2015
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1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy
15 auth.
A. Jouve,
V. Balan,
N. Bresson,
C. Euvrard-Colnat,
F. Fournel,
Y. Exbrayat,
G. Mauguen,
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C. Beitia,
L. Arnaud,
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S. Chéramy,
S. Lhostis,
A. Farcy,
S. Guillaumet,
S. Mermoz
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5 |
2017 |
5
2017
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UTBB FDSOI scaling enablers for the 10nm node
34 auth.
Laurent Grenouillet,
Qing Liu,
R. Wacquez,
Pierre Morin,
Loubet Nicolas,
David Cooper,
A. Pofelski,
W. Weng,
F. Bauman,
M. Gribelyuk,
Yun-Yu Wang,
B. D. Salvo,
J. Gimbert,
Kangguo Cheng,
Y. L. Tiec,
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D. Chanemougame,
E. Augendre,
Sylvain Maitrejean,
A. Khakifirooz,
J. Kuss,
R. Schulz,
C. Janicki,
B. Lherron,
S. Guillaumet,
O. Rozeau,
F. Chafik,
J. Bataillon,
T. Wu,
W. Kleemeier,
M. Celik,
O. Faynot,
R. Sampson,
Bruce B. Doris,
M. Vinet
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4 |
2013 |
4
2013
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Power, performance, and cost comparisons of monolithic 3D ICs and TSV-based 3D ICs
D. Nayak,
S. Banna,
S. Samal,
S. Lim
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4 |
2015 |
4
2015
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Radiation effects in advanced SOI devices: New insights into Total Ionizing Dose and Single-Event Effects
11 auth.
M. Gaillardin,
M. Raine,
P. Paillet,
M. Martinez,
C. Marcandella,
S. Girard,
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O. Duhamel,
N. Richard,
F. Andrieu,
S. Barraud,
O. Faynot
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4 |
2013 |
4
2013
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