| Title | Claps | Level | Year | L/Y |
|---|---|---|---|---|
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Monolithic 3D IC vs. TSV-based 3D IC in 14nm FinFET technology
S. Samal, D. Nayak, M. Ichihashi, S. Banna, S. Lim
In this paper, we conduct a comprehensive design comparison of 2D ICs, monolithic 3D ICs and TSV-based 3D ICs using a silicon-validated 14nm FinFET foundry technology and commercial quality designs. Through full-chip layouts and sign-off analysis us…
In this paper, we conduct a comprehensive design comparison of 2D ICs, monolithic 3D ICs and TSV-based 3D ICs using a silicon-validated 14nm FinFET foundry technology and commercial quality designs. Through full-chip layouts and sign-off analysis using commercial-grade tools, the potential of monolithic 3D IC is explored and validated in terms of power, performance and area against that of TSV-based 3D ICs and 2D ICs.
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0
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5 | 2016 |
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