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P. Griffin

IEEE Transactions on Electron Devices, Digest. International Electron Devices Meeting,, Proceedings of the IEEE, IEEE Journal of Solid-State Circuits
11
Role
Title
Level Year L/R
🐬 Point defects and dopant diffusion in silicon
P. Fahey, P. Griffin, J. Plummer 		10 1989
10
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🐬 I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q
K. Gopalakrishnan, P. Griffin, J. Plummer 		8 2002
8
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🐬 Impact ionization MOS (I-MOS)-Part I: device and circuit simulations
K. Gopalakrishnan, P. Griffin, J. Plummer 		8 2005
8
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🐬 Activation and diffusion studies of ion-implanted p and n dopants in germanium
C. O. Chui, K. Gopalakrishnan, P. Griffin, J. Plummer, K. Saraswat 		8 2003
8
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🐬 Bipolar resistive switching in polycrystalline TiO2 films
K. Tsunoda, Y. Fukuzumi, J. Jameson, Zheng Wang, P. Griffin, Y. Nishi 		7 2007
7
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🐢 Material and process limits in silicon VLSI technology
J. Plummer, P. Griffin 		7 2001
7
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🐬 Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon
A. Ural, P. Griffin, J. Plummer 		7 1999
7
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🐬 Impact ionization MOS (I-MOS)-Part II: experimental results
K. Gopalakrishnan, R. Woo, C. Jungemann, P. Griffin, J. Plummer 		7 2005
7
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🐬 Physical processes associated with the deactivation of dopants in laser annealed silicon
Y. Takamura, P. Griffin, J. Plummer 		7 2002
7
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🐬 SELF-DIFFUSION IN SILICON : SIMILARITY BETWEEN THE PROPERTIES OF NATIVE POINT DEFECTS
A. Ural, P. Griffin, J. Plummer 		6 1999
6
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🐬 A High-Resolution Low-Power Incremental $\Sigma\Delta$ ADC With Extended Range for Biosensor Arrays
A. Agah, K. Vleugels, P. Griffin, M. Ronaghi, J. Plummer, B. Wooley 		6 2010
6
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